advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -30v lower on-resistance r ds(on) 21m fast switching characteristic i d -35a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w e as single pulse avalanche energy 4 mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.2 /w rthj-a 62.5 /w data and specifications subject to change without n otice 50 maximum thermal resistance, junction-ambient (pcb m ount) 3 201107254 1 -55 to 150 thermal data parameter AP4455GEH-HF rating halogen-free product 39 -55 to 150 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v -30 + 25 -35 2 continuous drain current, v gs @ 10v -22 pulsed drain current 1 -120 total power dissipation operating junction temperature range total power dissipation storage temperature range g d s to-252(h) the to-252 package is widely preferred for commercial-indu strial surface mount applications and suited for low voltage appli cations such as dc/dc converters. g d s advanced power mosfets from apec provide the designer with t he best combination of fast switching, ruggedized device desi gn, low on- resistance and cost-effectiveness.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-24a - - 21 m v gs =-4.5v, i d =-18a - - 36 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-18a - 33 - s i dss drain-source leakage current v ds =-24v, v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 30 ua q g total gate charge i d =-18a - 19 30 nc q gs gate-source charge v ds =-24v - 5 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 11.5 - nc t d(on) turn-on delay time v ds =-15v - 8.5 - ns t r rise time i d =-18a - 50 - ns t d(off) turn-off delay time r g =3.3 - 38 - ns t f fall time v gs =-10v - 90 - ns c iss input capacitance v gs =0v - 1430 2300 pf c oss output capacitance v ds =-25v - 230 - pf c rss reverse transfer capacitance f=1.0mhz - 205 - pf r g gate resistance f=1.0mhz - 7 14 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-24a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-10a, v gs =0 v , - 26 - ns q rr reverse recovery charge di/dt=100a/s - 17 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board 4.starting t j =25 o c, v dd =-20v, l=1mh, r g =25 , i as =-10a. this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 2 AP4455GEH-HF
AP4455GEH-HF fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate volta ge fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. on-resistance vs. fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 0 2 4 6 8 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c = 25 o c -10v -7.0v -6.0v -5.0v v g = - 4.0v 0.6 1.0 1.4 1.8 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d = -24 a v g =-10v 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0 20 40 60 80 0 2 4 6 8 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c = 150 o c -10v -7.0v -6.0v -5.0v v g = - 4.0v 10 14 18 22 26 30 2 4 6 8 10 -v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d = - 18 a t c =25 0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) i d = -250ua
AP4455GEH-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristi cs fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. maximum continuous drain curr ent fig 12. gate charge waveform v.s. case temperature 4 q v g -4.5v q gs q gd q g charge 0 400 800 1200 1600 2000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0 2 4 6 8 10 0 10 20 30 40 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = - 18 a v ds = - 24 v 1 10 100 1000 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.0 0.0 1 0.0 0.1 0.2 duty=0. single pulse operation in this area limited by r ds(on) 0 10 20 30 40 25 50 75 100 125 150 t c , case temperature ( o c ) -i d , drain current (a)
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